Infineon Technologies BSC080N12LSGATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

12A (Ta), 99A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

156W (Tc)

Qualification

-

Continuous Drain Current Id

99A

Vds - Drain-Source Breakdown Voltage

120 V

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

2.4 V

Pd - Power Dissipation

156 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

60 S

Channel Mode

Enhancement

Part # Aliases

BSC080N12LS G SP002256844

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

79 nC

Rds On - Drain-Source Resistance

8 mOhms

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

99 A

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

156W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

2.4V @ 112μA

输入电容(Ciss)(Max)@Vds

7400 pF @ 60 V

门极电荷(Qg)(最大)@Vgs

79 nC @ 10 V

上升时间

9 ns

漏源电压 (Vdss)

120 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET