Infineon Technologies BSC0901NSIXT

工厂交货时间

26 Weeks

包装/外壳

TDSON-8

表面安装

YES

终端数量

5

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

100 A

Rds On - Drain-Source Resistance

1.7 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

1 V

Qg - Gate Charge

41 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

69 W

Channel Mode

Enhancement

Tradename

OptiMOS

Fall Time

4.6 ns

Forward Transconductance - Min

65 S

Factory Pack QuantityFactory Pack Quantity

5000

Typical Turn-Off Delay Time

27 ns

Typical Turn-On Delay Time

5 ns

Part # Aliases

SP000819818 BSC0901NSIATMA1

Unit Weight

0.003592 oz

Continuous Drain Current Id

100

Package Description

SMALL OUTLINE, R-PDSO-F5

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BSC0901NSIXT

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

1.76

Drain Current-Max (ID)

28 A

包装

MouseReel

无铅代码

有

ECCN 代码

EAR99

端子位置

DUAL

终端形式

FLAT

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

JESD-30代码

R-PDSO-F5

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

69

箱体转运

DRAIN

晶体管应用

SWITCHING

上升时间

7.2 ns

极性/通道类型

N-CHANNEL

晶体管类型

1 N-Channel

漏极-源极导通最大电阻

0.0026 Ω

脉冲漏极电流-最大值(IDM)

400 A

DS 击穿电压-最小值

30 V

信道型

N

雪崩能量等级（Eas）

45 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

高度

1.27 mm

长度

5.9 mm

宽度

5.15 mm