Infineon Technologies BSC110N15NS5SCATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8-7

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

76A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.6V @ 91μA

Power Dissipation (Max)

125W (Tc)

Factory Pack QuantityFactory Pack Quantity

4000

Part # Aliases

BSC110N15NS5SC SP005561075

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

3 V

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

28 nC

Rds On - Drain-Source Resistance

11 mOhms

Id - Continuous Drain Current

77 A

操作温度

-55°C ~ 150°C (TJ)

包装

Reel

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

11mOhm @ 38A, 10V

输入电容(Ciss)(Max)@Vds

2770 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

35 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET