Infineon Technologies BSS123IXTSA1

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

PG-SOT-23-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

500mW (Ta)

Continuous Drain Current Id

190

Number of Elements per Chip

1

Package Type

SOT-223

Channel Mode

Depletion

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

1.8 V

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

BSS123I SP005558639

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

630 pC

Rds On - Drain-Source Resistance

6 Ohms

RoHS

Details

Id - Continuous Drain Current

190 mA

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

4

通道数量

1 Channel

功率耗散

500

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

6Ohm @ 190mA, 10V

不同 Id 时 Vgs(th)（最大值）

1.8V @ 13μA

输入电容(Ciss)(Max)@Vds

15 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

0.63 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET