Infineon Technologies BSS126IXTSA1

包装/外壳

TO-236-3, SC-59, SOT-23-3

安装类型

表面贴装

供应商器件包装

PG-SOT23-3-5

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

21mA (Ta)

Base Product Number

BSS126

Power Dissipation (Max)

500mW (Ta)

Number of Elements per Chip

1

Package Type

SOT-23

Channel Mode

Depletion

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

21mA

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

6.1 ns

Vgs th - Gate-Source Threshold Voltage

2.7 V

Pd - Power Dissipation

500 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

0.008 S

Part # Aliases

BSS126I SP005425148

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

1.4 nC

Rds On - Drain-Source Resistance

500 Ohms

Typical Turn-Off Delay Time

14 ns

Id - Continuous Drain Current

21 mA

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

500mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

500Ohm @ 16mA, 10V

不同 Id 时 Vgs(th)（最大值）

1.6V @ 8μA

输入电容(Ciss)(Max)@Vds

21 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

1.4 nC @ 5 V

上升时间

9.7 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N - Channel

信道型

N

场效应管特性

-

产品类别

MOSFET