Infineon Technologies BSS169IXTSA1

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

PG-SOT-23-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

190mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Power Dissipation (Max)

360mW (Ta)

Continuous Drain Current Id

190

Number of Elements per Chip

1

Package Type

SOT-23

Channel Mode

Depletion

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.9 V

Pd - Power Dissipation

360 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

BSS169I SP005558635

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

2.1 nC

Rds On - Drain-Source Resistance

12 Ohms

RoHS

Details

Id - Continuous Drain Current

190 mA

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

360

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.9Ohm @ 190mA, 10V

不同 Id 时 Vgs(th)（最大值）

1.8V @ 50μA

输入电容(Ciss)(Max)@Vds

51 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

2.1 nC @ 7 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET