Infineon Technologies BSZ0803LSATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8 FL

厂商

Infineon Technologies

Product Status

不用于新设计

Current - Continuous Drain (Id) @ 25℃

9A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.1W (Ta), 52W (Tc)

Base Product Number

BSZ0803

Number of Elements per Chip

1

Package Type

TSDSON-8 FL

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

40A

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

4.7 ns

Vgs th - Gate-Source Threshold Voltage

1.7 V

Pd - Power Dissipation

52 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.001367 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

18 S

Channel Mode

Enhancement

Part # Aliases

BSZ0803LS SP001614108

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

15 nC

Rds On - Drain-Source Resistance

16 mOhms

RoHS

Details

Typical Turn-Off Delay Time

14.3 ns

Id - Continuous Drain Current

40 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

52W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

14.6mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 23μA

输入电容(Ciss)(Max)@Vds

1300 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

15 nC @ 10 V

上升时间

3.2 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET