Infineon Technologies IAUC80N04S6L032ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 18μA

Power Dissipation (Max)

50W (Tc)

Base Product Number

IAUC80

Continuous Drain Current Id

80

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

3 ns

Vgs th - Gate-Source Threshold Voltage

1.6 V

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Unit Weight

0.003966 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IAUC80N04S6L032 SP001700160

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

19 nC

Rds On - Drain-Source Resistance

3.75 mOhms

RoHS

Details

Typical Turn-Off Delay Time

10 ns

Id - Continuous Drain Current

80 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

50

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.29mOhm @ 40A, 10V

输入电容(Ciss)(Max)@Vds

1515 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

25 nC @ 10 V

上升时间

1 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±16V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N

场效应管特性

-

产品类别

MOSFET