Infineon Technologies IGLD60R190D1SAUMA1

安装类型

表面贴装

包装/外壳

8-LDFN Exposed Pad

供应商器件包装

PG-LSON-8-1

Power Dissipation (Max)

62.5W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Current - Continuous Drain (Id) @ 25℃

10A (Tc)

Product Status

活跃

Package

Tape & Reel (TR)

厂商

Infineon Technologies

Moisture Sensitive

有

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Factory Pack QuantityFactory Pack Quantity

3000

Part # Aliases

IGLD60R190D1S SP005562629

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

10 V, 10 V

操作温度

-55°C ~ 150°C (TJ)

包装

Reel

子类别

MOSFETs

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

-

不同 Id 时 Vgs(th)（最大值）

1.6V @ 960μA

输入电容(Ciss)(Max)@Vds

157 pF @ 400 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

-10V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET