Infineon Technologies IMBF170R650M1XTMA1

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

PG-TO263-7-13

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

7.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

12V, 15V

Power Dissipation (Max)

88W (Tc)

Base Product Number

IMBF170

Continuous Drain Current Id

7.4

Number of Elements per Chip

1

Package Type

TO-263-7

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

1.7 kV

Typical Turn-On Delay Time

22 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

88 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

0.65 S

Part # Aliases

IMBF170R650M1 SP002739686

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

8 nC

Rds On - Drain-Source Resistance

650 mOhms

RoHS

Details

Typical Turn-Off Delay Time

24 ns

Id - Continuous Drain Current

7.4 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

7

通道数量

1 Channel

功率耗散

88

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

650mOhm @ 1.5A, 15V

不同 Id 时 Vgs(th)（最大值）

5.7V @ 1.7mA

输入电容(Ciss)(Max)@Vds

422 pF @ 1000 V

门极电荷(Qg)(最大)@Vgs

8 nC @ 12 V

上升时间

16 ns

漏源电压 (Vdss)

1700 V

Vgs（最大值）

+20V, -10V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET