Infineon Technologies IMBG120R030M1HXTMA1

安装类型

表面贴装

包装/外壳

TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

供应商器件包装

PG-TO263-7-12

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

56A (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

5.7V @ 11.5mA

Power Dissipation (Max)

300W (Tc)

Base Product Number

IMBG120

Continuous Drain Current Id

56

MSL

MSL 1 - Unlimited

Vds - Drain-Source Breakdown Voltage

1.2 kV

Typical Turn-On Delay Time

11 ns

Vgs th - Gate-Source Threshold Voltage

5.7 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 7 V, + 23 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

14 S

Channel Mode

Enhancement

Part # Aliases

IMBG120R030M1H SP004463784

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

63 nC

Tradename

CoolSiC

Rds On - Drain-Source Resistance

41 mOhms

RoHS

Details

Typical Turn-Off Delay Time

25 ns

Id - Continuous Drain Current

56 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

300

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

41mOhm @ 25A, 18V

输入电容(Ciss)(Max)@Vds

2290 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

63 nC @ 18 V

上升时间

14 ns

漏源电压 (Vdss)

1200 V

Vgs（最大值）

+18V, -15V

产品类别

MOSFET

信道型

N通道

场效应管特性

Standard

产品类别

MOSFET