Infineon Technologies IPAN60R280PFD7SXKSA1

包装/外壳

TO-220-3 Full Pack

安装类型

通孔

供应商器件包装

PG-TO220-FP

Base Product Number

IPAN60R

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 180μA

Power Dissipation (Max)

24W (Tc)

Continuous Drain Current Id

12

Qualification

-

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

18 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

24 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPAN60R280PFD7S SP005354004

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

15.3 nC

Rds On - Drain-Source Resistance

549 mOhms

Typical Turn-Off Delay Time

48 ns

Id - Continuous Drain Current

12 A

操作温度

-40°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

24

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

280mOhm @ 3.6A, 10V

输入电容(Ciss)(Max)@Vds

656 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

15.3 nC @ 10 V

上升时间

12 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET