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价格梯度
内地含税价
1
¥27.129761
10
¥25.594114
100
¥24.145391
500
¥22.77867
1000
¥21.489311
Infineon Technologies IPB026N10NF2SATMA1
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- 对比
IPB026N10NF2SATMA1
1211-IPB026N10NF2SATMA1
晶体管 - FET,MOSFET - 单个
TO-263-3
大陆
立即发货

TRENCH >=100V
--最小包装量--
¥
总价: ¥
IPB026N10NF2SATMA1详情
Infineon Technologies IPB026N10NF2SATMA1重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-263-3
厂商
Infineon Technologies
Product Status
活跃
Vds - Drain-Source Breakdown Voltage
100 V
Vgs th - Gate-Source Threshold Voltage
2.2 V
Pd - Power Dissipation
250 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Minimum Operating Temperature
- 55 C
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Qg - Gate Charge
103 nC
Rds On - Drain-Source Resistance
2.65 mOhms
Id - Continuous Drain Current
162 A
系列
*
通道数量
1 Channel
IPB026N10NF2SATMA1拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies






哦! 它是空的。