Infineon Technologies IPB026N10NF2SATMA1

包装/外壳

TO-263-3

厂商

Infineon Technologies

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

250 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

103 nC

Rds On - Drain-Source Resistance

2.65 mOhms

Id - Continuous Drain Current

162 A

系列

*

通道数量

1 Channel