Infineon Technologies IPB136N08N3GATMA1

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3

厂商

Infineon Technologies

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 33μA

Power Dissipation (Max)

79W (Tc)

Continuous Drain Current Id

45

操作温度

-55°C ~ 175°C (TJ)

功率耗散

79

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

13.9mOhm @ 45A, 10V

输入电容(Ciss)(Max)@Vds

1730 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

25 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

信道型

N通道

场效应管特性

-