Infineon Technologies IPB320P10LMATMA1

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

6.5A (Ta), 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

Base Product Number

IPB320P

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

63A

Number of Elements per Chip

1

Package Type

D2PAK (TO-263)

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

300 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

219 nC

Rds On - Drain-Source Resistance

32 mOhms

Id - Continuous Drain Current

63 A

操作温度

-55°C ~ 175°C (TJ)

引脚数量

3

通道数量

1 Channel

功率耗散

300W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

32mOhm @ 54A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 5.55mA

输入电容(Ciss)(Max)@Vds

11000 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

219 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

P Channel

场效应管特性

-