Infineon Technologies IPB65R041CFD7ATMA1

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

PG-TO263-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

227W (Tc)

Base Product Number

IPB65R

Continuous Drain Current Id

50

Number of Elements per Chip

1

Package Type

D2PAK (TO-263)

Qualification

-

Vds - Drain-Source Breakdown Voltage

700 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

227 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPB65R041CFD7 SP005413357

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

102 nC

Rds On - Drain-Source Resistance

41 mOhms

RoHS

Details

Id - Continuous Drain Current

50 A

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

227

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

41mOhm @ 24.8A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 1.24mA

输入电容(Ciss)(Max)@Vds

4975 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

102 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET