Infineon Technologies IPB95R310PFD7ATMA1

包装/外壳

PG-TO-263-3

安装类型

表面贴装

供应商器件包装

PG-TO263-3-2

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

950 V

Id - Continuous Drain Current

17.5 A

Rds On - Drain-Source Resistance

310 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Qg - Gate Charge

61 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

125 W

Channel Mode

Enhancement

Fall Time

4 ns

Factory Pack QuantityFactory Pack Quantity

1000

Typical Turn-Off Delay Time

61 ns

Typical Turn-On Delay Time

13 ns

Part # Aliases

SP005547008

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.5V @ 520µA

Product Status

活跃

Power Dissipation (Max)

125W (Tc)

厂商

Infineon Technologies

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

17.5A (Tc)

Package

Tape & Reel (TR)

系列

CoolMOS™

操作温度

-55°C ~ 150°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

310mOhm @ 10.4A, 10V

输入电容(Ciss)(Max)@Vds

1765 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

61 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

950 V

Vgs（最大值）

±30V

场效应管特性

-