Infineon Technologies IPD11DP10NMATMA1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.4A (Ta), 22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

3W (Ta), 125W (Tc)

Base Product Number

IPD11D

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

22A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

125 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPD11DP10NM SP001656992

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

59 nC

Rds On - Drain-Source Resistance

111 mOhms

RoHS

Details

Id - Continuous Drain Current

22 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

125W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

111mOhm @ 18A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1.7mA

输入电容(Ciss)(Max)@Vds

3200 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

74 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

P

场效应管特性

-

产品

MOSFET

产品类别

MOSFET