Infineon Technologies IPD220N06L3GATMA1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3-311

Power Dissipation (Max)

36W (Tc)

Base Product Number

IPD220N

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 11μA

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

36 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

7 nC

Rds On - Drain-Source Resistance

22 mOhms

Id - Continuous Drain Current

30 A

操作温度

-55°C ~ 175°C (TJ)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

22mOhm @ 30A, 10V

输入电容(Ciss)(Max)@Vds

1600 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

10 nC @ 4.5 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-