Infineon Technologies IPD50P03P4L11ATMA2

工厂交货时间

12 Weeks

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3-11

Base Product Number

IPD50P03

Power Dissipation (Max)

58W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 85μA

Current - Continuous Drain (Id) @ 25℃

50A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Continuous Drain Current Id

50

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

58 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 5 V

Unit Weight

0.011425 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPD50P03P4L-11 SP002325738

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

42 nC

Rds On - Drain-Source Resistance

13 mOhms

RoHS

Details

Typical Turn-Off Delay Time

45 ns

Id - Continuous Drain Current

50 A

Package Description

,

Moisture Sensitivity Levels

1

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

IPD50P03P4L11ATMA2

Part Life Cycle Code

活跃

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Risk Rank

1.66

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

峰值回流焊温度（摄氏度）

未说明

通道数量

1 Channel

功率耗散

58

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

10.5mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

3770 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

55 nC @ 10 V

上升时间

3 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

+5V, -16V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P

场效应管特性

-

产品类别

MOSFET

达到SVHC

compliant