Infineon Technologies IPD70P04P4L08ATMA2

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

引脚数

3

供应商器件包装

PG-TO252-3-313

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 120μA

Power Dissipation (Max)

75W (Tc)

Base Product Number

IPD70P04

Continuous Drain Current Id

70

Number of Elements per Chip

1

Package Type

TO-252

Channel Mode

Enhancement

Qualification

AEC-Q101

Part # Aliases

IPD70P04P4L-08 SP002325772

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

71 nC

Rds On - Drain-Source Resistance

9.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

50 ns

Id - Continuous Drain Current

70 A

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

2500

Minimum Operating Temperature

- 55 C

Unit Weight

0.139332 oz

Vgs - Gate-Source Voltage

- 16 V, + 5 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

P-Channel

Pd - Power Dissipation

75 W

Vgs th - Gate-Source Threshold Voltage

1.7 V

Typical Turn-On Delay Time

12 ns

Vds - Drain-Source Breakdown Voltage

40 V

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

75

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

7.8mOhm @ 70A, 10V

输入电容(Ciss)(Max)@Vds

5430 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

92 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

+5V, -16V

产品类别

MOSFET

信道型

P

场效应管特性

-

产品类别

MOSFET