Infineon Technologies IPD90P04P4L04ATMA2

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

PG-TO252-3-313

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

90A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 250μA

Power Dissipation (Max)

125W (Tc)

Base Product Number

IPD90P

Continuous Drain Current Id

90

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

1.7 V

Pd - Power Dissipation

125 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 16 V, + 5 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPD90P04P4L-04 SP002325782

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

135 nC

Rds On - Drain-Source Resistance

4.3 mOhms

RoHS

Details

Id - Continuous Drain Current

90 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

125

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

4.3mOhm @ 90A, 10V

输入电容(Ciss)(Max)@Vds

11570 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

176 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

+5V, -16V

产品类别

MOSFET

信道型

P Channel

场效应管特性

-

产品类别

MOSFET