Infineon Technologies IPP019N06NF2SAKMA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3-U05

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

33A (Ta), 185A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3.8W (Ta), 188W (Tc)

Factory Pack QuantityFactory Pack Quantity

1000

Part # Aliases

IPP019N06NF2S SP005742471

Manufacturer

Infineon

Brand

Infineon Technologies

RoHS

Details

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

188 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

108 nC

Rds On - Drain-Source Resistance

1.9 mOhms

Id - Continuous Drain Current

185 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.9mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

3.3V @ 129μA

输入电容(Ciss)(Max)@Vds

7300 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

162 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET