Infineon Technologies IPP050N10NF2SAKMA1

包装/外壳

TO-220-3

安装类型

通孔

引脚数

3

供应商器件包装

PG-TO220-3

Base Product Number

IPP050M

Power Dissipation (Max)

3.8W (Ta), 150W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 84μA

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Current - Continuous Drain (Id) @ 25℃

19.4A (Ta), 110A (Tc)

Product Status

活跃

Package

Tube

厂商

Infineon Technologies

Continuous Drain Current Id

110

Number of Elements per Chip

1

Package Type

TO-220

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

150 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPP050N10NF2S SP005548848

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

51 nC

Rds On - Drain-Source Resistance

5 mOhms

Id - Continuous Drain Current

110 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

150

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5mOhm @ 60A, 10V

输入电容(Ciss)(Max)@Vds

3600 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

76 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET