Infineon Technologies IPP120P04P4L03AKSA2

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3-1

厂商

Infineon Technologies

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

136W (Tc)

Number of Elements per Chip

1

Package Type

TO-220

Channel Mode

Enhancement

Qualification

AEC-Q101

Continuous Drain Current Id

120A

Id - Continuous Drain Current

120 A

RoHS

Details

Rds On - Drain-Source Resistance

3.1 mOhms

Qg - Gate Charge

180 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

IPP120P04P4L-03 SP002581210

Mounting Styles

通孔

Factory Pack QuantityFactory Pack Quantity

500

Minimum Operating Temperature

- 55 C

Unit Weight

0.068784 oz

Vgs - Gate-Source Voltage

- 16 V, + 5 V

Maximum Operating Temperature

+ 175 C

Transistor Polarity

P-Channel

Pd - Power Dissipation

136 W

Vgs th - Gate-Source Threshold Voltage

1.7 V

Vds - Drain-Source Breakdown Voltage

40 V

Base Product Number

IPP120

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

136W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

3.4mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 340μA

输入电容(Ciss)(Max)@Vds

15000 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

234 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

+5V, -16V

产品类别

MOSFET

信道型

P

场效应管特性

-

产品类别

MOSFET