Infineon Technologies IPP65R060CFD7XKSA1

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

PG-TO220-3-1

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

171W (Tc)

Base Product Number

IPP65R060

Qualification

-

Continuous Drain Current Id

36A

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

31 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

171 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPP65R060CFD7 SP005433687

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

68 nC

Rds On - Drain-Source Resistance

60 mOhms

Typical Turn-Off Delay Time

114 ns

Id - Continuous Drain Current

36 A

操作温度

-55°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

171W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

60mOhm @ 16.4A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 860μA

输入电容(Ciss)(Max)@Vds

3288 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

68 nC @ 10 V

上升时间

14 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N - Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET