Infineon Technologies IPT030N12N3GATMA1

包装/外壳

8-PowerSFN

安装类型

表面贴装

引脚数

8

供应商器件包装

PG-HSOF-8-1

Base Product Number

IPT030N

Power Dissipation (Max)

3.8W (Ta), 375W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 270μA

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

24A (Ta), 237A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Number of Elements per Chip

1

Package Type

HSOF-8

Qualification

-

Continuous Drain Current Id

237A

Vds - Drain-Source Breakdown Voltage

120 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

375 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IPT030N12N3 G SP005348026

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

158 nC

Rds On - Drain-Source Resistance

3 mOhms

RoHS

Details

Id - Continuous Drain Current

237 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

375W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3mOhm @ 100A, 10V

输入电容(Ciss)(Max)@Vds

13000 pF @ 60 V

门极电荷(Qg)(最大)@Vgs

198 nC @ 10 V

漏源电压 (Vdss)

120 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET