Infineon Technologies IPTC019N10NM5ATMA1

安装类型

表面贴装

包装/外壳

16-PowerSOP Module

引脚数

16

供应商器件包装

PG-HDSOP-16-2

Base Product Number

IPTC019N

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

31A (Ta), 279A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.8V @ 210μA

Number of Elements per Chip

1

Package Type

PG HDSOP-16 (TOLT)

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

279A

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

300 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1800

Mounting Styles

SMD/SMT

Part # Aliases

IPTC019N10NM5 SP005447146

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

128 nC

Rds On - Drain-Source Resistance

1.9 mOhms

Id - Continuous Drain Current

279 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

300W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.9mOhm @ 100A, 10V

输入电容(Ciss)(Max)@Vds

12000 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

160 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET