Infineon Technologies IPW65R115CFD7AXKSA1

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

PG-TO247-3-41

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Base Product Number

IPW65R115

Power Dissipation (Max)

114W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 490μA

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Qualification

AEC-Q101

Pd - Power Dissipation

114 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

240

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IPW65R115CFD7A SP003793162

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

41 nC

Tradename

CoolMOS

Rds On - Drain-Source Resistance

115 mOhms

RoHS

Details

Id - Continuous Drain Current

24 A

操作温度

-40°C ~ 150°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

115mOhm @ 9.7A, 10V

输入电容(Ciss)(Max)@Vds

1950 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

41 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET