Infineon Technologies IQE006NE2LM5SCATMA1

包装/外壳

PG-WHSON-8

安装类型

表面贴装

供应商器件包装

PG-WHSON-8-1

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

25 V

Id - Continuous Drain Current

47 A

Rds On - Drain-Source Resistance

580 uOhms

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

82 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

2.1 W

Channel Mode

Enhancement

Fall Time

5.3 ns

Forward Transconductance - Min

260 S

Factory Pack QuantityFactory Pack Quantity

6000

Typical Turn-Off Delay Time

27 ns

Typical Turn-On Delay Time

5.3 ns

Part # Aliases

IQE006NE2LM5SC SP005419117

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

47A (Ta), 310A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Infineon Technologies

Power Dissipation (Max)

2.1W (Ta), 89W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250µA

操作温度

-55°C ~ 150°C (TJ)

系列

OptiMOS™ 5

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

580mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

5453 pF @ 12 V

门极电荷(Qg)(最大)@Vgs

82 nC @ 10 V

上升时间

2.6 ns

漏源电压 (Vdss)

25 V

Vgs（最大值）

±16V

晶体管类型

1 N-Channel

场效应管特性

-