Infineon Technologies IQE008N03LM5ATMA1

包装/外壳

8-PowerTDFN

安装类型

表面贴装

引脚数

8

供应商器件包装

PG-TSON-8-4

厂商

Infineon Technologies

Product Status

活跃

Base Product Number

IQE008N

Power Dissipation (Max)

2.1W (Ta), 89W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

27A (Ta), 253A (Tc)

Number of Elements per Chip

1

Package Type

PQFN 3 x 3

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

253A

Id - Continuous Drain Current

253 A

RoHS

Details

Rds On - Drain-Source Resistance

850 uOhms

Qg - Gate Charge

64 nC

Brand

Infineon Technologies

Manufacturer

Infineon

Part # Aliases

IQE008N03LM5 SP005401191

Channel Mode

Enhancement

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

5000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

89 W

Vgs th - Gate-Source Threshold Voltage

2 V

Vds - Drain-Source Breakdown Voltage

30 V

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

89W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.85mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

5700 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

64 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±16V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品

MOSFET

产品类别

MOSFET