Infineon Technologies IRF100P218AKMA1

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

PG-TO247-3

厂商

Infineon Technologies

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

209A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3.8W (Ta), 556W (Tc)

Continuous Drain Current Id

209

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

3.8 V

Pd - Power Dissipation

556 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

400

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

IRF100P218 SP005537804

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

330 nC

Rds On - Drain-Source Resistance

1.28 mOhms

Id - Continuous Drain Current

209 A

操作温度

-55°C ~ 175°C (TJ)

包装

Tube

子类别

MOSFETs

通道数量

1 Channel

功率耗散

556

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.28mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

3.8V @ 278μA

输入电容(Ciss)(Max)@Vds

24000 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

412 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET