Infineon Technologies IRF343
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IRF343
1211-IRF343
晶体管 - FET,MOSFET - 单个
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350V 8A 800mΩ@5A,10V 125W 4V@250uA 1 N-channel TO-3 MOSFETs ROHS
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IRF343详情
Infineon Technologies IRF343重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
true
Drain Source Voltage (Vdss)
350V
Drain Source On Resistance (RDS(on)@Vgs,Id)
800mΩ@5A,10V
Power Dissipation (Pd)
125W
Gate Threshold Voltage (Vgs(th)@Id)
4V@250uA
Input Capacitance (Ciss@Vds)
1.6nF@25V
Total Gate Charge (Qg@Vgs)
60nC@10V
Package
Bag-packed
操作温度
-55℃~+150℃@(Tj)
类型
1 N-channel
Continuous Drain Current (Id)
8A
IRF343拓展信息
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies
Infineon Technologies







哦! 它是空的。