Infineon Technologies IRF343

RoHS

true

Drain Source Voltage (Vdss)

350V

Drain Source On Resistance (RDS(on)@Vgs,Id)

800mΩ@5A,10V

Power Dissipation (Pd)

125W

Gate Threshold Voltage (Vgs(th)@Id)

4V@250uA

Input Capacitance (Ciss@Vds)

1.6nF@25V

Total Gate Charge (Qg@Vgs)

60nC@10V

Package

Bag-packed

操作温度

-55℃~+150℃@(Tj)

类型

1 N-channel

Continuous Drain Current (Id)

8A