Infineon Technologies IRL60SC216ARMA1

安装类型

表面贴装

包装/外壳

TO-263-7, D2Pak (6 Leads + Tab)

供应商器件包装

PG-TO263-7

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

324A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.4W (Ta), 375W (Tc)

Base Product Number

IRL60

Continuous Drain Current Id

324

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

375 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.056438 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

800

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

IRL60SC216 SP001646070

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

174 nC

Rds On - Drain-Source Resistance

1.2 mOhms

RoHS

Details

Id - Continuous Drain Current

324 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

375

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.5mOhm @ 100A, 10V

不同 Id 时 Vgs(th)（最大值）

2.4V @ 250μA

输入电容(Ciss)(Max)@Vds

16000 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

218 nC @ 4.5 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET