Infineon Technologies ISC007N04NM6ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8 FL

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

48A (Ta), 381A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.8V @ 1.05mA

Power Dissipation (Max)

3W (Ta), 188W (Tc)

Base Product Number

ISC007N

Qualification

-

Package Type

SuperSO8 5 x 6

Number of Elements per Chip

1

Continuous Drain Current Id

381

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.8 V

Pd - Power Dissipation

188 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

94 nC

Rds On - Drain-Source Resistance

700 uOhms

Id - Continuous Drain Current

381 A

操作温度

-55°C ~ 175°C (TJ)

通道数量

1 Channel

功率耗散

188

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.7mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

8400 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

117 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-