Infineon Technologies ISC012N04LM6ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

引脚数

8

供应商器件包装

PG-TDSON-8 FL

Power Dissipation (Max)

3W (Ta), 125W (Tc)

Base Product Number

ISC012N

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

37A (Ta), 238A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.3V @ 250μA

Continuous Drain Current Id

238

Qualification

-

Number of Elements per Chip

1

Package Type

TDSON-8 FL

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

ISC012N04LM6 SP005559102

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

25 nC

Rds On - Drain-Source Resistance

1.2 mOhms

Id - Continuous Drain Current

238 A

操作温度

-55°C ~ 175°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

125

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2mOhm @ 50A, 10V

输入电容(Ciss)(Max)@Vds

4600 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

64 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET