Infineon Technologies ISC046N04NM5ATMA1

包装/外壳

8-PowerTDFN

安装类型

表面贴装

引脚数

8

供应商器件包装

PG-TDSON-8 FL

Base Product Number

ISC046N

Power Dissipation (Max)

3W (Ta), 50W (Tc)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.4V @ 17μA

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

Current - Continuous Drain (Id) @ 25℃

19A (Ta), 77A (Tc)

Product Status

活跃

厂商

Infineon Technologies

Continuous Drain Current Id

77

Number of Elements per Chip

1

Package Type

TDSON-8 FL

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Pd - Power Dissipation

50 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

ISC046N04NM5 SP005399115

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

16 nC

Rds On - Drain-Source Resistance

4.6 mOhms

RoHS

Details

Id - Continuous Drain Current

77 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

50

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.6mOhm @ 35A, 10V

输入电容(Ciss)(Max)@Vds

1400 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

21 nC @ 10 V

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET