Infineon Technologies ISC0602NLSATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8-6

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

14A (Ta), 66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.5W (Ta), 60W (Tc)

Base Product Number

ISC0602N

Qualification

-

Continuous Drain Current Id

66A

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

60 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

11 nC

Rds On - Drain-Source Resistance

7.3 mOhms

Id - Continuous Drain Current

66 A

操作温度

-55°C ~ 150°C (TJ)

引脚数量

8

通道数量

1 Channel

功率耗散

60W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7.3mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 29μA

输入电容(Ciss)(Max)@Vds

1800 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

22 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

信道型

N通道

场效应管特性

-