Infineon Technologies ISC0802NLSATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TDSON-8-7

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

22A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.5W (Ta), 125W (Tc)

Base Product Number

ISC0802N

Continuous Drain Current Id

150

Number of Elements per Chip

1

Package Type

SuperSO8 5 x 6

Qualification

-

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

125 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

29 nC

Rds On - Drain-Source Resistance

3.6 mOhms

Id - Continuous Drain Current

150 A

操作温度

-55°C ~ 150°C (TJ)

引脚数量

8

通道数量

1 Channel

功率耗散

125

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.6mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 92μA

输入电容(Ciss)(Max)@Vds

5190 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

73 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-