Infineon Technologies ISK024NE2LM5AULA1

安装类型

表面贴装

包装/外壳

6-PowerVDFN

供应商器件包装

6-PQFN Dual (2x2)

厂商

Infineon Technologies

Product Status

Discontinued at Digi-Key

Current - Continuous Drain (Id) @ 25℃

-

Drive Voltage (Max Rds On, Min Rds On)

-

Power Dissipation (Max)

-

Base Product Number

ISK024N

Vds - Drain-Source Breakdown Voltage

25 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

11 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 16 V, + 16 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

15000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

ISK024NE2LM5 SP002296752

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

14.8 nC

Rds On - Drain-Source Resistance

2.4 mOhms

RoHS

Details

Id - Continuous Drain Current

55 A

操作温度

-

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

场效应管类型

-

Rds On(Max)@Id,Vgs

-

不同 Id 时 Vgs(th)（最大值）

-

漏源电压 (Vdss)

40 V

Vgs（最大值）

-

产品类别

MOSFET

场效应管特性

-

产品

MOSFET

产品类别

MOSFET