Infineon Technologies ISP20EP10LMXTSA1

安装类型

表面贴装

包装/外壳

TO-261-4, TO-261AA

供应商器件包装

PG-SOT223-4

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

650mA (Ta), 990mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

1.8W (Ta), 4.2W (Tc)

Base Product Number

ISP20E

Number of Elements per Chip

1

Package Type

SOT-223

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

990mA

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

4.2 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

3.5 nC

Rds On - Drain-Source Resistance

200 Ohms

Id - Continuous Drain Current

990 mA

操作温度

-55°C ~ 150°C (TJ)

引脚数量

3

通道数量

1 Channel

功率耗散

4.2W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

2Ohm @ 600mA, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 78μA

输入电容(Ciss)(Max)@Vds

170 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

3.5 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

P

场效应管特性

-