Infineon Technologies ISZ019N03L5SATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TSDSON-8-FL

厂商

Infineon Technologies

Package

Bulk

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

22A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250μA

Power Dissipation (Max)

-

Qualification

-

Continuous Drain Current Id

40A

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

-

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

ISZ019N03L5S SP005408602

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

22 nC

Tradename

OptiMOS ~ StrongIRFET

Rds On - Drain-Source Resistance

1.9 mOhms

Id - Continuous Drain Current

40 A

Base Product Number

ISZ019

操作温度

-55°C ~ 150°C (TJ)

包装

切割胶带

子类别

MOSFETs

通道数量

1 Channel

功率耗散

-

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.9mOhm @ 20A, 10V

输入电容(Ciss)(Max)@Vds

2800 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

44 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET