Infineon Technologies ISZ034N06LM5ATMA1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

PG-TSDSON-8-26

厂商

Infineon Technologies

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

19A (Ta), 112A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

2.5W (Ta), 83W (Tc)

Base Product Number

ISZ034N

Continuous Drain Current Id

112

Number of Elements per Chip

1

Package Type

PQFN 3 x 3

Channel Mode

Enhancement

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

60 V

Vgs th - Gate-Source Threshold Voltage

2.3 V

Pd - Power Dissipation

83 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Part # Aliases

ISZ034N06LM5 SP005402741

Manufacturer

Infineon

Brand

Infineon Technologies

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

3.4 mOhms

Id - Continuous Drain Current

112 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

8

通道数量

1 Channel

功率耗散

83

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.4mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.3V @ 36μA

输入电容(Ciss)(Max)@Vds

3500 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

53 nC @ 10 V

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET