Infineon Technologies SP000216320

包装/外壳

TO-220-3

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

800 V

Id - Continuous Drain Current

11 A

Rds On - Drain-Source Resistance

390 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Qg - Gate Charge

85 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

34 W

Channel Mode

Enhancement

Fall Time

10 ns

Factory Pack QuantityFactory Pack Quantity

500

Typical Turn-Off Delay Time

72 ns

Typical Turn-On Delay Time

25 ns

Part # Aliases

SPA11N80C3XKSA1

Unit Weight

0.068784 oz

包装

Tube

系列

XPA11N80

配置

Single

通道数量

1 Channel

上升时间

15 ns

晶体管类型

1 N-Channel

高度

15.65 mm

长度

10 mm

宽度

4.4 mm