Infineon Technologies SP000681024

包装/外壳

TO-220-3

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

4.5 A

Rds On - Drain-Source Resistance

950 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3.9 V

Qg - Gate Charge

19 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

31 W

Channel Mode

Enhancement

Factory Pack QuantityFactory Pack Quantity

500

Part # Aliases

SPP04N60C3XKSA1

Unit Weight

0.068784 oz

Mounting Styles

通孔

RoHS

Details

包装

Tube

通道数量

1 Channel

高度

15.65 mm

长度

10 mm

宽度

4.4 mm