Infineon Technologies SP000928260

包装/外壳

TO-252-3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

6 A

Rds On - Drain-Source Resistance

594 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3.5 V

Qg - Gate Charge

20 nC

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

62.5 W

Channel Mode

Enhancement

Qualification

AEC-Q101

Tradename

CoolMOS

Fall Time

10 ns

Factory Pack QuantityFactory Pack Quantity

2500

Typical Turn-Off Delay Time

40 ns

Typical Turn-On Delay Time

9 ns

Part # Aliases

IPD65R660CFDAATMA1

Unit Weight

0.011640 oz

包装

Reel

系列

CoolMOS CFDA

配置

Single

通道数量

1 Channel

上升时间

8 ns

晶体管类型

1 N-Channel

高度

2.3 mm

长度

6.5 mm

宽度

6.22 mm