Infineon Technologies AG HYB25D256161CE-5
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HYB25D256161CE-5
1211-HYB25D256161CE-5
存储器
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大陆
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Description: DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66, LEAD AND HALOGEN FREE, PLASTIC, TSOP2-66
1最小包装量--
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HYB25D256161CE-5详情
技术文档: Infineon Technologies AG HYB25D256161CE-5.
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HYB25D256161CE-5拓展信息
S80KS5122GABHI020
Infineon Technologies
S80KS5123GABHB020
Infineon Technologies
CY62157G30-45ZSXAT
Infineon Technologies
CY15B116QI-20BKXC
Infineon Technologies
CY15V116QSN-108BKXI
Infineon Technologies
S80KS2564GACHI040
Infineon Technologies
S26HS512TGABHI010
Infineon Technologies
CY15V108QSN-108BKXI
Infineon Technologies
CY15V116QI-20BKXC
Infineon Technologies
S70KL1283DPBHI020
Infineon Technologies







哦! 它是空的。