Infineon Technologies AG IR2113E6

表面安装

YES

终端数量

16

ECCN (US)

EAR99

HTS

8542.39.00.01

Driver Type

高低侧

Driver Configuration

Non-Inverting

High and Low Sides Dependency

Independent

Maximum Rise Time (ns)

35

Maximum Fall Time (ns)

25

Maximum Propagation Delay Time (ns)

150

Input Logic Compatibility

CMOS|LSTTL

Minimum Operating Supply Voltage (V)

10

Maximum Operating Supply Voltage (V)

20

Typical Input Low Threshold Voltage (V)

6(Max)

Typical Input High Threshold Voltage (V)

9.5(Min)

Reference Voltage (V)

600(Max)

Peak Output Current(A)

2(Min)

Maximum Power Dissipation (mW)

1600

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

125

Special Features

欠压锁定

Standard Package Name

LLCC

Supplier Package

LLCC

Mounting

表面贴装

Package Height

3.22(Max)

Package Length

9.14(Max)

Package Width

7.49(Max)

PCB changed

18

Lead Shape

No Lead

Package Description

QCCN, LCC18,.3X.35

Package Style

CHIP CARRIER

Moisture Sensitivity Levels

3

Package Body Material

CERAMIC, METAL-SEALED COFIRED

Package Equivalence Code

LCC18,.3X.35

Operating Temperature-Min

-55 °C

Supply Voltage-Nom

15 V

Reflow Temperature-Max (s)

未说明

Supply Voltage-Min

10 V

Operating Temperature-Max

125 °C

Rohs Code

无

Manufacturer Part Number

IR2113E6

Turn-on Time

0.26 µs

Package Code

QCCN

Package Shape

RECTANGULAR

Manufacturer

Infineon Technologies AG

Part Life Cycle Code

活跃

Turn-off Time

0.22 µs

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Supply Voltage-Max

20 V

Risk Rank

5.53

JESD-609代码

e0

零件状态

活跃

ECCN 代码

EAR99

类型

MOSFET|IGBT

端子表面处理

Tin/Lead (Sn/Pb)

HTS代码

8542.39.00.01

子类别

MOSFET驱动器

技术

CMOS

端子位置

QUAD

终端形式

无铅

峰值回流焊温度（摄氏度）

未说明

功能数量

1

端子间距

1.27 mm

Reach合规守则

unknown

引脚数量

18

JESD-30代码

R-CQCC-N16

输出的数量

2

资历状况

不合格

电源

15 V

温度等级

MILITARY

座位高度-最大

3.22 mm

接口IC类型

基于半桥的mosfet驱动器

驱动器数量

2

输出峰值电流限制-名

2 A

高边驱动器

YES

电源电压1-最小值

6 V

电源电压1-最大值

620 V

宽度

7.305 mm

长度

8.955 mm

RoHS状态

RoHS non-compliant